Abstract
Surface trap states hinder charge transfer and transport properties in TiO2 nanorods (NRs), limiting its application on optoelectronic devices. Here, we study the interfacial processes between rutile TiO2 NR and CdSe quantum dots (QDs) using TiO2 interlayer passivation treatments. Anatase or rutile TiO2 thin layers were deposited on an NR surface by two wet-chemical deposition treatments. Reduced interfacial charge recombination between NRs and CdSe QDs was observed by electrochemical impedance spectroscopy with the introduction of TiO2 thin film interlayers compared to bare TiO2 NRs. These results can be ascribed to in-gap trap state passivation of the TiO2 NR surface, which led to an increase in open circuit voltage. Moreover, the rutile thin layer was more efficient than anatase to promote a higher photo-excited electron transfer from CdSe QDs to TiO2 NRs due to a large driving force for charge injection, as confirmed by surface photovoltage spectroscopy.
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