Abstract
In this paper, the effect of three device parameters, gate electrode work function (WF), device layer/film thickness (T c ) and channel doping concentration (N d ), on DC parameters has been studied in 20 nm gate length Bulk Planar Junctionless Transistor (BPJLT) using Sentaurus TCAD simulator. Using the above device parameters (I ON /I OFF ) ratio of the BPJLT is optimized with I OFF constraint. The results are compared against the literature [1]. A gate electrode work function of 4.98 eV, film thickness of 8 nm and channel doping of 3.3×1019cm−3 gives 29% increase in ION and (I ON /I OFF ) ratio.
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