Abstract
This paper reports on the results of the use of resolution enhancement techniques in combination with an advanced deep ultraviolet (DUV) photoresist on an ASML PAS5500/300 stepper (maximum numerical aperture (NA) = 0.63. The performance of 0.15 and 0.13 μm features will be evaluated using optical proximity correction (OPC) and an alternating phase-shifting mask (PSM) and these results will be compared with exposures with a binary mask. Two different resist thicknesses will be compared: 450 and 600 nm.
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