Abstract
In this paper, we significantly improved the internal quantum efficiency and output power of AlGaN-based deep UV (DUV) LEDs by replacing the conventional p-AlGaN electron blocking layer (EBL) with the p-AlInGaN/AlInGaN graded superlattice (SL) EBL. Simulation results show that the introduction of the p-AlInGaN graded SL EBL improved the carrier distribution while having the lower electric field, thus increasing the radiative recombination rate in multiple quantum wells (MQWs). The highest IQE obtained by p-AlInGaN/AlInGaN graded SL EBL is 96.6%, which is 44.9% higher than the conventional p-AlGaN EBL with no efficiency droop. At the same time, the output power is 4.6 times that of the conventional p-AlGaN EBL. It is believed that the proposed p-AlInGaN graded SL EBL will be helpful in the development of high-performance DUV LEDs.
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