Abstract
Ni(Pt)Si1−xGex films with 5 at% Platinum (Pt) were prepared using a two-step annealing scheme. By monitoring the variation of sheet resistance (Rsh) with the Rapid Thermal Annealing (RTA) temperature, an optimal germanosilicidation process i.e. RTA1 at 300 °C/60 s and RTA2 at 400 °C/30 s was determined. The as-prepared Ni(Pt)Si1−xGex films were examined by means of X-ray diffraction (XRD) for crystallinity, cross-sectional transmission electron microscope (X-TEM) for morphology, Energy dispersive X-ray (EDX) element mapping and line-scanning for the element distribution. In order to elucidate the redistribution of Pt in the germanosilicide films, a tentative model of Pt diffusion during the Ni(Pt) germanosilicidation process is proposed which is in good agreement with the experimental results.
Published Version
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