Optimization of a new microbolometer IR detector in standard CMOS technology

Abstract

Listen

Translate article

Abstract. This paper reports a new microbolometer structure with the CMOS n-well layer as the active element and the metal layer as intermediate layer on supporting arms. Due to thermal flux into the microbolometer, thermal variation occurs within it that leads to the variation of resistivity. The more thermal variation, the more microbolometer performance. Various materials have been used for fabrication of bolometers that one could outperforms the performance of bolometers by selecting an appropriate materials for active and intermediate layers on supporting arm. Detailed thermal simulations in ANSYS were performed to obtain an optimized structure. Maximum specific detectivity has been calculated 1334×10 9 cmHz 1/2 /W with a responsivity of 32721 V/W.