Abstract
Silicon Carbide (SiC) Schottky diode is simulated using Silvaco TCAD. Five different metals, Aluminum (Al), Platinum (Pt), Palladium (Pd), Nickel (Ni), and Molybdenum (Mo), used for Schottky contact and diode parameters such as ideality factor, barrier height, turn-on voltage is studied. The forward current density and breakdown voltage of the Schottky diode is studied with thickness and doping density of n-type 4H-SiC semiconductor. Doping density varied from 1 × 1014 cm−3 to 9 × 1014 cm−3, and epi-layer thickness varied from 10 µm to 50 µm. By varying doping concentration, thickness, and metal contact, an optimized Schottky diode is obtained for high-speed switching applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
