Abstract
A hetero gate dielectric SOI TFET is presented here. The device performance is observed in TCAD. The effect of channel doping on the device characteristics is studied. Moreover, the effect of different gate dielectrics on the ON current, OFF current, band-to-band generation rate due to different body layer thickness, and variation of oxide thickness effect on ON and OFF currents are observed. The variation of transfer characteristics, band-to-band generation rate for various back gate voltages are also observed. In comparison with the conventional TFET, the proposed device provides higher ON state current and a better ON state to OFF state current ratio and Subtheshold Swing. Moreover, the Tunnel FET ON state is independent of back gate voltage, only the subthreshold region is varying with back gate voltage unlike MOSFET.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.