Abstract
In this work, we present the fabrication of heterojunction Cu2SnS3/ZnS photovoltaic cell using indigenously developed cost-effective ultrasonic spray pyrolysis method. Substrate temperature of as-prepared films have been varied from 350 °C to 500 °C. Temperature played a key role in enhancing the optical properties of ZnS films making it useable as window layer for solar cell. The p-type Cu2SnS3 (CTS) absorber layer of the cell is grown at optimized substrate temperature (500 °C) and with optimized Cu and Sn composition. Finally, solar cell is fabricated with these optimized p and n layers and have the structure of glass/FTO/Cu2SnS3/ZnS/Ag with Voc = 685 mV, JSC = 1.8 mA/cm2, fill factor = 39% and solar efficiency = 0.5%. A detailed discussion is given in overcoming the intricacies involved in the cell and improving the efficiency.
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