Abstract
Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is a crucial power semiconductor device used in electronic equipment, playing a key role in various electronic systems and power electronics. As electronic technology advances, the demand for MOSFETs is increasing, requiring higher switching speeds, lower power consumption, enhanced reliability, and improved integration. Therefore, optimizing MOSFETs and exploring their applications is of significant research importance. This article presents an analysis conducted by both domestic and international scholars, focusing on topics such as the use of asymmetric inner surface oxide, layout optimization of bipolar MOSFETs, design enhancements of fully-encircled gate (GAA) MOSFETs, and studies on double-layer epitaxial structures. Additionally, it discusses the potential applications of MOSFETs in automotive electronic systems. Furthermore, the article delves into the future prospects of MOSFETs, highlighting the exploration of new materials, technological advancements, and heterogeneous integration to achieve higher performance, smaller size, and lower power consumption in devices. Furthermore, these findings from the research assist in guiding ongoing advancements in MOSFET technology and provide an outline of potential future developments.
Published Version
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