Abstract
AlGaN/GaN HEMTs with several different designs of field plate structure are studied for device optimization purposes. To increase device breakdown voltage, optimal dimensions of field plates were first investigated using Silvaco TCAD software, and the electrical characteristics of the devices are analyzed. Several devices were designed and fabricated based on the simulation results. It has been confirmed that the gate-source composite field plate (SG-FP) has a higher breakdown voltage than other types of field plate structures, with FOM reaches 504 MW/cm−2, showing that the device with SG-FP structure outperforms the other three structures. The experiment and simulation verify that the gate-source composite field plate optimizes FOM by increasing the breakdown voltage and reducing the intrinsic on-resistance so that the device has better electrical performance and a wider application range.
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