Abstract
GaN as the third generation semiconductor material has good prospects for development. The wide bandgap of GaN enables it to work at high temperature, and has higher breakdown voltage and better breakdown characteristics. The structure of AlGaN/GaN based high electron mobility transistor (AlGaN/GaN HEMT) is simulated and analyzed by using simulation software Silvaco ATLAS. Firstly, the effect of field plate structure on breakdown voltage is introduced, and then the effect of field plate length on breakdown voltage of devices is analyzed. The results show that the change of field plate length has great influence on breakdown voltage, and the optimal value is determined by testing, which has practical guiding significance for the actual device fabrication.
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