Abstract
GaN as the third generation semiconductor material has good prospects for development. The wide bandgap of GaN enables it to work at high temperature, and has higher breakdown voltage and better breakdown characteristics. The structure of AlGaN/GaN based high electron mobility transistor (AlGaN/GaN HEMT) is simulated and analyzed by using simulation software Silvaco ATLAS. Firstly, the effect of field plate structure on breakdown voltage is introduced, and then the effect of field plate length on breakdown voltage of devices is analyzed. The results show that the change of field plate length has great influence on breakdown voltage, and the optimal value is determined by testing, which has practical guiding significance for the actual device fabrication.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.