Abstract
GaInP/AlGaInP triple quantum well (TQW) laser structures were grown by low-pressure metalorganic chemical vapour deposition (MOCVD) with tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP). Device fabrication was carried out using the pulsed anodic oxidation (PAO) process, which was optimised for the (Al0.7Ga0.3)0.52In0.48P upper cladding layer of the laser structure using photoluminescence (PL) measurements and atomic force microscopy (AFM) characterisation. AlGaInP laser diodes, grown with TBAs and TBP, fabricated under the optimised oxidation conditions, exhibit the lowest reported threshold current density (Jth) of 1.5 kA/cm2 at room temperature (RT) under pulsed operation.
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