Abstract
SummaryThe Use of epitaxial IGBT in ZCOR (Zero Current Quasi Reasonant) Converters needs the optimisation of both the device structure and of the Working Conditions.The most critical issue is the life time of minority carrier in the epitaxial layer which involves a trade-off between static and dynamic performance of the IGBTs.A Correct design of the converter contributes also improving the working condition of the IGBT so reducing the switching losses.This paper investigates methods of reducing IGBT power losses in a ZCQRC and shows how a correctly adjusted lifetime makes a 1000V epitaxial IGBT suitable for operation at high frequency
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
