Abstract
Among the various chalcopyrites compounds used in photovoltaic devices, Copper Gallium Selenium (CGSe) turns out as an underperformer due to its limited photovoltaic performance, So far highest efficiency measured is about 11.9%. This paper investigates the possibilities for efficiency enhancement for the CuGSe layer in Cu2O/CGSe/TiO2/ZnO thin film solar cell structure using the SCAPS-1D simulation program. The short circuit current (Jsc) and power conversion efficiency (PCE) is 30.77 mA cm−2 and 27.10%, with open-circuit voltage (Voc) and fill factor (FF) of 1.03 V and 84.72% respectively. Furthermore, we evaluated some specific parameters of TiO2/CGSe heterostructure, such as the influence of layer thickness, operating temperature, the effect of defect density and acceptor density of CGSe layer, metal work function, and the effect of series and shunt resistance on cell performance. We investigated that combining TiO2 as an ETL and Cu2O as HTL with a CGSe absorber layer is novel and promising, which results in higher power conversation efficiency and improves other PV parameters. The application of CGSe/TiO2 heterojunction in a simulated model offers a viable method for the development of high-efficiency solar cell devices.
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