Abstract
This paper mainly presents a set of new Sapphire Backside Roughing technology. Presently, the associated Sapphire Backside Roughing technology is still concentrated on chemical etching, as its yield rate and efficiency are often limited by lattice structures, and the derived chemical waste fluid after etching is most likely to cause ecological contamination. In this research, refined abrasive jet processing technology is adopted, and in the meantime, the Taguchi experiment design method is taken for detailed experimental planning. Through processing parameter conditions and abrasive selection and development, proper surface roughing and processing uniformity are obtained so as to improve the various weak points of the abovementioned traditional etching effectively. It is discovered that abrasive blasting processing technology is, respectively, combined with wax-coated #1000 SiC particles and wax-coated #800 Zirconium particles to process the sapphire substrate with initial surface roughness 0.8–0.9 μmRa from the experiment. A 1.1–1.2 μmRa surface roughness effect can be achieved about two minutes later. The experimental results show that the actual degree of sapphire substrate surface roughing obtained in the AJM process depends on the gas pressure, impact angle, wax-coated abrasives, and additives. The new Sapphire Backside Roughing technology has high flexibility, which not only meets the requirements for sapphire surface roughing specification but can also effectively reduce the sapphire substrate roughing time and related cost.
Highlights
Sapphire has excellent mechanical, optical, and chemical properties, such as high transmission rate, good thermal conductivity, wearing resistance, corrosion resistance, and high hardness
The light emitting diodes (LEDs) made of the sapphire substrate has a wide application, the popularization of LED lighting technology has always been limited because the chip substrate has a too high a price and the luminous efficiency needs improvement
LED epitaxy quality has reached the stage of usability, but there is great space for improvement in component characteristics; for example, improving the light extraction efficiency, increasing the LED heat dissipation characteristic, and reducing the junction temperature
Summary
Optical, and chemical properties, such as high transmission rate, good thermal conductivity, wearing resistance, corrosion resistance, and high hardness. It is widely applied in photovoltaic modules and optical modules [1,2], but due to its high unit price and small thickness (400–500 μm), its related processing technology is hard to grasp to control the surface quality, influencing the added value of follow-up products. As the improvement of light provement light extraction efficiencyisistolimited, and through theuniform improv purpose of of research and development maintain the epi wafer cessing technology, roughing technology textured surface is adopted to provement of light extraction efficiency isorlimited, and through the improv face unsmooth and destroy thetechnology total internal reflectionsurface mechanism, so that cessing technology, roughing or textured is adopted to likely to take offand from the limitation of critical angle, to reach the purpos face unsmooth destroy the total internal reflection mechanism, of 16so that
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