Abstract
Nd3+ incorporation in CaF2 layers grown by molecular-beam epitaxy on CaF2 substrates is investigated by making use of the photoluminescence lines associated with Nd3+ centers involving one or several Nd3+ ions. It is shown that the substrate crystal orientation has no effect on the aggregation state of Nd3+ while the growth temperature greatly influences the formation of Nd3+ aggregate centers. An optimum growth temperature around 500 °C is determined, leading to CaF2 layers of good crystal quality in which the main emission, related to single Nd3+ centers, is optimized. The results have been obtained for Nd3+ concentrations as high as 3.6 wt % Nd and growth rates in the range of 0.2–1 μm/h.
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