Abstract
AbstractWe investigate the optimal control of stationary drift‐diffusion models for semiconductors. Our main focus is the control of the current by optimizing the doping profile, which is the natural control variables, wita total variation penalty. We investigate the augmented Lagrangian method for the numerical solution, with an efficient Gummel iteration for the subproblem. Numerical results are presented for the ballistic diode. (© 2012 Wiley‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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