Abstract

In this paper numerical optimum base doping for minimum base transit time is presented. The bandgap-narrowing effect, high-injection effect, and carrier velocity saturation at the base edge of the base collector junction, and also doping and field dependence of mobility, are considered. Many doping profile are investigated including, linear, exponential doping concentration, we assumed uniform, exponentially and Gaussian doping profiles. Base transit time is investigated numerically for optimum base doping profile.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.