Optimal Control of a Cavity-Mediated iSWAP Gate between Silicon Spin Qubits

Abstract

Semiconductor spin qubits may be coupled through a superconducting cavity to generate an entangling two-qubit gate. However, the fidelity of such an operation will be reduced by a variety of error mechanisms such as charge and magnetic noise, phonons, cavity loss, transitions to nonqubit states, and, for electrons in silicon, excitation into other valley eigenstates. Here, we model the effects of these error sources and the valley degree of freedom on the performance of a cavity-mediated two-qubit $\mathrm{i}$swap gate. For valley splittings inadequately large relative to the interdot tunnel coupling within each qubit, we find that valley excitation may be a limiter to the fidelity of this two-qubit gate. In addition, we show trade-offs between gating times and exposure to various error sources, identifying optimal operating regimes and device improvements that would have the greatest impact on the fidelity of the cavity-mediated spin $\mathrm{i}$swap gate. Importantly, we find that, while the impact of charge noise and phonon relaxation favor operation in the regime where the qubits are most spinlike to reduce sensitivity to these sources of noise, the combination of hyperfine noise and valley physics shifts the optimal regime to chargelike qubits with stronger effective spin-photon coupling so that gate times can be made as short as possible. In this regime, the primary limitation is the need to avoid Landau-Zener transitions as the gate is implemented.