Abstract
A survey of polarization-dependent optical phenomena in semiconductor and metal nanowires and nanorods is presented. Due to a large dielectric constant mismatch between nanostructures and their environment, the amplitude of the optical electric field inside the former depends drastically on the angle between the direction of light polarization and the nanostructure axis. As a result, optical absorption, photoconductivity, and nonlinear photoresponse in semiconductor structures are strongly anisotropic, with the maximal value for the parallel light polarization. In metal structures, absorption anisotropy depends on the light frequency, and for that close to the transverse plasmon frequency is maximal for the perpendiculat light polarization. Luminescence emitted by semiconductor nanowires and nanorods is strongly polarized along their axis. Joint action of polarization effects in absorption and luminescence results in the polarization memory, when luminescence of a random ensemble of nanorods is polarized in the same direction as the exciting light.
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call