Optics calculations and beam line design for the JANNuS facility in Orsay

Abstract

JANNuS (Joint Accelerators for Nano-Science and Nuclear Simulation) will be a unique user facility in Europe dedicated to material modification by ion beam implantation and irradiation. The main originality of the project is that it will be possible to perform implantation and irradiation with simultaneous multiple ions beams and in situ characterization by transmission electron microscopy (TEM) observation or ion beam analysis. This facility will be composed of two experimental platforms located in two sites: the CEA-SRMP in Saclay and the CNRS-CSNSM in Orsay. This paper will focus on the design of two new transport beam lines for the Orsay site.One of the most challenging parts of the JANNuS project (Orsay site) is to design two new beam lines in order to inject, into a 200kV TEM, two different ion beams (low and medium energy) coming from two existing pieces of equipment: a 2MV Tandem accelerator and a 190kV ion implanter.For these new beam lines, first order beam calculations have been done using transfer matrix formalism. A genetic algorithm has been written and adapted to perform the optimization of the beam line parameters. Then, using the SIMION code, field maps of the electrostatic elements (quadrupoles, spherical sectors) have been calculated and ion trajectories have been simulated. We studied specifically the optical aberrations induced by the electrostatic spherical deflectors. Finally, the results of the first order calculations and the field map simulations show a good agreement.