Abstract
An optically pumped terahertz (THz) modulator based on a MoS2-Si heterostructure metasurface are fabricated and investigated in this paper. The THz wave modulation in MoS2 metasurface has been demonstrated by THz time domain spectroscopy experiment and numerical simulation, which can reach over 90% under the continuous wave laser pumping of 4W/cm2 power density. Importantly, the catalysis of photocarrier generation in MoS2-Si heterostructure has been proved by the comparsion between the modulation depth of metasurface with and without MoS2 nanosheet under the same pumping power, and we found that the strcuture of metasurface and polariztion direction can also influence the photocarrier density in MoS2 metasurface. This novel THz modulator based on 2D material has a high effective modulation on THz waves under a low pumping power, which has a bright potential in THz applications.
Highlights
An optically pumped terahertz (THz) modulator based on a MoS2-Si heterostructure metasurface are fabricated and investigated in this paper
The THz wave modulation in MoS2 metasurface has been demonstrated by THz time domain spectroscopy experiment and numerical simulation, which can reach over 90% under the continuous wave laser pumping of 4W/cm[2] power density
The catalysis of photocarrier generation in MoS2-Si heterostructure has been proved by the comparsion between the modulation depth of metasurface with and without MoS2 nanosheet under the same pumping power, and we found that the strcuture of metasurface and polariztion direction can influence the photocarrier density in MoS2 metasurface
Summary
An optically pumped terahertz (THz) modulator based on a MoS2-Si heterostructure metasurface are fabricated and investigated in this paper. Docherty et al has studied the transient carrier dynamic process of monolayer MoS2 grown on sapphire substrate.[16] Recently, we have found that a catalytic effect on THz modulation in the Si-grown MoS2, which can significantly enhance the modulation depth compared with bare Si wafer under the same weak CW laser pumping.[17] The unique band structure of MoS2-Si heterostructure and the high mobility of MoS2 make more carriers are generated on the Si surface.
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