Abstract
We report on extensive polarization-resolved photoluminescence (PL) studies of a variety of excitonic complexes formed in high-quality symmetric GaAs quantum wells containing a high-mobility two-dimensional (2D) hole gas in a broad range of magnetic fields from 0 to 23 T and under two-beam illumination, allowing for dynamical control of the hole concentration beyond the point of conversion from $p$- to $n$-type structures. We have demonstrated charge conversion between positive and negative complexes bound to acceptors in the well, differing from the charge conversion of free trions due to charge reflection symmetry breaking by a fixed impurity, leaving a qualitative trace (exchange splitting) in the PL spectrum. The effect of switching between the electron and hole gases (in the same well) on different emission lines has also allowed us to distinguish the (direct and cyclotron-satellite) emission lines from positive trions moving almost freely in the quantum well and bound to nearby ionized acceptors in the barrier, thus demonstrating their coexistence in high-quality structures.
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