Abstract
Anion antisite defects in semi-insulating GaP single crystals (doped with group V atoms) are investigated with optically detected electron paramagnetic resonance and electron nuclear double resonance (ODEPR and ODENDOR) ODEPR and ODENDOR are measured as microwave- and microwave- and rf-induced changes of the magnetic circular dichroism of the optical absorption (MCDA), respectively. In GaP: V two P antisite defects are found in about equal concentration which within ENDOR precision have tetrahedral site symmetry with respect to the nearest P ligands. The two PGaP4 defects have only slightly differentg-factors and31P superhyperfine interactions, but differ by one order of magnitude in their spin-lattice relaxation times. Their optical properties are also different from those of the PGaP4 defects reported earlier in GaP: Cr. It is concluded that there is no experimental prove yet. that any of the PGaP4 defects hitherto observed in GaP in an isolated PGaP4 defect which is not associated with another defect to form an antisite related defect complex.
Published Version
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