Abstract
We report on the use of plasma hydrogenation of silicon doped p-type GaAs epilayer samples to form infrared waveguides through acceptor passivation. Secondary-ion mass spectroscopy (SIMS) analysis indicated that the deuterium concentrations in the epilayers after plasma exposure were nearly equal to the acceptor concentration and extended to depths between 2.0 and 4.0 μm. Reflectivity measurements showed that the epilayers had passivated regions whose thicknesses corresponded to those determined by SIMS analysis. Laser-coupling experiments at 1.15 μm showed optical waveguiding in each sample and the lowest waveguide losses were on the order of 35 dB cm−1.
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