Abstract
We report on switch-on of 12 kV, 1cm2 optically triggered 4H-SiC thyristor fabricated by CREE Inc., to Imax=270 А with current rise time of ~ 3 s. Temperature dependence of holding current Ih in this thyristor has been experimentally studied in the temperature range from 300 to 425 K. It is shown that measurements of Ih temperature dependence under condition of optical switch-on at small anode bias and large load resistance reveal the existence of a ”weak point” within the optical window. This point is characterized by a much smaller critical charge than that within the remaining part of the window.
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