Abstract
In this work we correlated transmission spectra of GaN layers grown on sapphire substrates by hydride vapour phase epitaxy with biaxial stress measured in the layers. It was observed that the sign of stress in the GaN layer is changed by Si doping and growth conditions. Transmission curves are shifted relative to each other depending on the stress in the layer. The cut-off wavelength of the transmission curves has a tendency to shift near parallel to a shorter wavelength range when the GaN layer is under the compression biaxial stress. When the GaN layer is under the tensile biaxial stress the cut off wavelength has a tendency to shift near parallel to a longer wavelength range).
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