Abstract
The wavelength modulated reflectivity spectrum of ion-implanted GaAs in the photon energy range 1.5–7.0 eV is reported. The specimens were obtained by 400 keV Te implantation at room temperature. Strong differences were found with respect to the optical behaviour of flash-evaporated films and crystalline samples. The Penn theory for materials with tetrahedral short-range order was applied and the absorption coefficient of ion-implanted GaAs is also reported.
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