Abstract
We investigate the optical switching process and the related structural properties of (GeTe)(Sb2Te3) epitaxial films close to Ge2Sb2Te5 composition on GaSb(001). While the amorphization process can take place in a single or in multiple steps, the re-crystallization process always takes place in multiple steps. Intermediate stages of the re-crystallization process are characterized by small crystalline islands within the amorphous area. The structural properties are investigated by optical microscopy and electron backscatter diffraction (EBSD) in a scanning electron microscope. The analysis of the EBSD pattern demonstrates that the crystalline islands at intermediate stages of the re-crystallization process exhibit different orientations. We conclude that the re-crystallization process is driven by nucleation without any orientation information from the substrate.
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