Abstract
In this letter, novel optical switches based on VO 2 thin film on substrates of silicon (1 0 0) has been fabricated. The vanadium dioxide thin films were deposited by reactive ion beam sputtering followed by a post-annealing. Testing shows the insertion loss of the optical switches is 1–2 dB, and the extinction ratio up to 26 dB. The speed of the switches is as fast as 3 ms.
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