Abstract
In this letter, a novel optical switch based on vanadium dioxide (VO2) thin film on substrates of silicon (100) has been fabricated. The vanadium dioxide thin films were deposited by reactive ion beam sputtering followed by a post-annealing. The testing result shows the insertion loss of the optical switches is about 1–2 dB, and the extinction ratio is up to 26 dB. The speed of the switches is as fast as 60 ns.
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