Optical study of GaN : Mn co-doped with Mg grown by metal organic vapor phase epitaxy

Abstract

Optical properties of a series of semi-insulating Mn-doped GaN co-doped with Mg were studied using photoluminescence (PL). A strong PL emission band at 1.0 eV was observed upon co-doping. The new band exhibited a rich fine structure with peaks at 1.057, 1.048, 1.035, 1.032, 1.020, 1.014, 1.008, 1.000 and 0.988±0.001 eV. The integrated and relative intensities of these lines varied as a function of the Mn concentration and excitation source. The measured luminescence decay time was 20–95 μs and depended on emission energy.