Abstract
A photoreflectance study of excitonic transitions in cubic GaN grown on cubic SiC pseudo-substrates is reported. The determination of the temperature dependence of the two exciton energies is allowed by the rather low transition widths. Comparison of the two PR transition energies and widths with theoretical calculation as a function of biaxial strain indicates that the lowest PR excitonic transition is composed of both contributions of light hole and heavy hole valence band related excitons. The width of this transition is increasing as the residual strain in the layer increases the splitting between light and heavy hole valence bands.
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