Abstract
We have investigated the depth range of ion implantation damage in GaAs/GaAlAs quantum wells. The photoluminescence emission intensity of single quantum wells was used as a local probe for the study of the damage created by an Ar+ ion beam at energies up to 170 keV. The range of the damage was examined for implantations under different angle of incidence. Even for random orientation we observe a wide extension of the defect profiles, which can be described by a characteristic decay length of 90 nm at an ion energy of 70 keV. Ion implantation along the major crystallographic axes leads to effective extensions of the damage, which are larger by more than a factor of 2 due to ion channeling.
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