Optical Studies on AlGaN/InGaN/GaN Single Quantum-Well Structures under External Strains

Abstract

Photoluminescence (PL) spectra from AlGaN/InGaN/GaN single quantum well structures with different In content in the InGaN well layer have been measured with applying biaxial tensile stresses by a central-flexure method for the purpose of studing piezoelectric-field effect on the well layer. The band-edge emission from the InGaN well layer showed linear variations against the applied stress with different coefficients depending on the In content. We obtained, e.g., +17.5 meV/GPa for an InGaN layer with 20% In content. Our result presents a direct evidence for the presence of piezoelectric field which depends on the In content.