Abstract
N type transparent conducting oxide semiconductors have been researched extensively in the past. P-type transparent semiconductors have been comparatively researched lesser. In order to advance in the field of transparent p-n junction devices, more and more researches are being done on p-type transparent semiconductors. CuInO2 is one of the p-type transparent semiconductor that has the prospects of being used extensively in transparent p-n junction devices. CuInO2 (50:50 of Cu2O: In2O3) thin films were RF sputter deposited onto glass slides. Optical transmission studies were performed on these thin films to extract the band gap. The deposition studies were also performed. The sputtered films were subsequently post annealed in different temperatures and different ambient conditions and their respective optical transmissions were recorded.
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