Abstract

Research conducted in the field of transparent conducting oxide films have been focused majorly on the N type transparent conducting oxide films like ZnO, ITO, etc. P-type transparent conducting oxide films have been studied comparatively lesser. More and more research are being done on P-type transparent conducting oxide films to progress in the field of transparent p-n junction devices. For this work, CuGaO2 (50:50 of Cu2O: Ga2O3) thin films was RF sputter deposited onto glass slides and quartz slides in the presence of oxygen. Deposition and optical transmission studies were performed on these annealed thin films. Subsequently the sputtered samples were systematically annealed at different temperature in different ambient conditions. Optical transmission studies were performed on these annealed CuGaO2 thin films.

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