Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8

Abstract

Optical transmission, photoluminescence and photoconductivity were used to study Hg1−xCdxTe with x = 0.7–0.8 (bandgap 0.8–1.1 eV at 300 K) grown by molecular-beam epitaxy. The studied material, which included layers used as spacers and barriers in potential- and quantum-well structures, showed a considerable degree of alloy disorder similar to narrower-bandgap HgCdTe grown by the same method. The observed disorder seemed to have no effect on the structural properties of the material and its optical absorption. Optimization of the growth technology of wider-bandgap HgCdTe should help improve the quality of potential- and quantum-well structures based on this material.