Abstract
The influence of transition elements on uniformity of optical properties of semi-insulating GaAs and Al-GaAs/GaAs quantum-well structures grown by molecular-beam epitaxy was studied by scanning micropho-toluminescence (MPL) and optical absorption. It is ascertained that the gettering properties of Ti, V, and Cr atoms suppress agglomeration of lattice defects and background impurities in the vicinity of disloca-tions. It is demonstrated that, in the quantum-well (QW) structures doped with Ti, the dependence of MPL intensity on the excitation level is nonlinear (bistable).
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