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Abstract
We measured subgap optical absorption and photoluminescence spectra in boron-doped a-Si:H films prepared by photochemical vapor deposition (photo-CVD) techniques. We estimated the Urbach energy (E0) and the density of defect states (Ns) from the subgap optical absorption spectra; the value of Ns was estimated from PL spectra. We conclude that Ns is approximately proportional to a square root of the boron doping level (B2H6/SiH4) and that E0 increases linearly with an increase in the doping level. It is found that the doping mechanism proposed by Street applies to the photo-CVD films.
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