Abstract
The low-temperature photocurrent, steady-state and time-resolved photoluminescence of a double-barrier diode under operation is studied. The observation of luminescence, with exciting light above (as well as below) the quantum well absorption edge, indicates that the tunnelling of holes plays an important role. Furthermore the authors have seen evidence of resonant tunnelling of minority holes when the double-barrier diode is illuminated. These holes are provided by a quantised level on the collector side. They recombine with collector electrons, which provides a signature of this level. The strong Stark shift of this new crossed transition gives information on the potential distribution in the diode.
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