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Abstract
Analysis of the long-wave edge of the self-absorption spectrum of gallium phosphide crystals not distorted by line structure at low temperatures enabled us to determine the characteristic parameters of indirect transitions. In GaP crystals of a different type the appearance of a discrete structure in the long-wave absorption edge is related to the localization of excitons near impurities of an unknown nature. This is confirmed by the appearance in these crystals of an intense green electroluminescence band at low temperatures.
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