Abstract
ABSTRACT The aim of this paper is to provide a complete and clear overview of the distinguishing dc and microwave features of HEMT performance under illumination. Devices based on different materials and technologies have been employed, thus making clear that the relevant findings can be considered of general validity. The analysis has been carried out in terms of dc, scattering and noise parameters, and supported with extensive measurements and in-depth modelling. Finally, the performance of X-band low-noise amplifiers with HEMTs exposed to laser radiation has been investigated. This study targets to contribute in the development of optically controlled transistors to perform various functions in microwave electronics circuits.
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