Sub-mW Operation of InP HEMT X-Band Low-Noise Amplifiers for Low Power Applications

Abstract

For the first time, the sub-mW operation of InP HEMT X-band low-noise amplifiers on 4-inch InP wafer was demonstrated. With optimized non-alloyed ohmic contact, gate recess profile and epitaxial layer design, the InP HEMT achieves average peak transconductance of 1150 mS/mm at VDS=0.3 V. The mean current cut off frequency is above 150 GHz at VDS= 0.3 V and IDS= 150 mA/mm. The developed low power InP HEMTs enables the manufacturing of low-noise amplifiers for low power applications. The superior performance of X-band low-noise amplifiers was also demonstrated. Operating at a supply voltage of 0.25 V and drain current of 3.75 mA with DC power of 0.937 mW, the low noise amplifier exhibits noise figure of 1.6 dB and gain of 11 dB at frequencies from 6 to 12 GHz.