Abstract
We have observed the optical second harmonic generation (SHG) from Si1-x Gex epitaxial films for the first time. The SH intensity was measured as a function of Ge fraction x and the azimuthal angle of rotation of the film about the surface normal. The SH intensity has a maximum around x=0.8∼0.9. The SH intensity curve as a function of the azimuthal angle shows a four-fold pattern for the Ge fraction x=0.8∼0.9. The enhancement in the SH intensity and the signal anisotropy are believed to be due to the resonance of the incident and second harmonic photon energies with the E0 and E1 band gaps of Si1-x Gex , respectively.
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