Abstract
Self-assembled GaInNAs/GaAs quantum dots (QDs) are promising structures for extending the emission wavelength of GaInNAs/GaAs quantum wells from 1.3 to 1.55 μm and beyond. We report herein the growth of GaInNAs/GaAs quantum dot samples of different deposited thickness by solid source molecular beam epitaxy using active nitrogen radicals generated by a radio frequency nitrogen plasma source. Images from atomic force spectroscopy reveal the increase of non-uniformity QDs size following the increase in the deposited thickness. Temperature-dependent photoluminescence (PL) measurements show PL line width shrinkage at low temperature suggests the relaxation of carriers into neighboring QD local-energy minimum. The low thermal activation energy of ∼72 meV, estimated from the temperature-dependent integrated PL intensity curve suggests the existence of non-radiative recombination centers that quench the luminescence intensity at higher temperature.
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