Abstract
The present study focused on ZnO thin films fabricated by sol–gel process and spin coated onto Si (100) and quartz substrates. ZnO thin films have a hexagonal würtzite structure with a grain diameter about 50nm. Optical properties were determined by photoluminescence (PL) and absorption spectroscopy. The absorption spectrum is dominated by a sharp excitonic peak at room and low temperatures. At room temperature, two transitions were observed by PL. One near to the prohibited energy band in ultraviolet (UV) region and the other centered at 640nm, characteristic of the electronic defects in the band-gap. The spectrum at 6K is dominated by donor-bound exciton lines and donor–acceptor pair transition. LO-phonon replica and two-electron satellite transitions are also observed. These optical characteristics are a signature of high-quality thin films.
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