Abstract
Mn-doped ZnO, MgO and Zn0.75Mg0.25O samples ([Mn] = 0.1 at.%) were produced by conventional solid-state technique and investigated by means of XRD, EPR, absorption, photocurrent, photo- and cathodoluminescence methods. It was shown that Zn0.75Mg0.25O solid solution with hexagonal structure has the bandgap of Eg ∼3.65 eV. The quenching of host defect-related luminescence in ZnO:Mn and in hexagonal Zn0.75Mg0.25O:Mn was observed, while the Mn-related emission being absent. The energy level of MnZn2+ center in hexagonal Zn0.75Mg0.25O:Mn was found to be at 2.16 eV below conduction band (c-band) bottom and all excited states of MnZn2+ ions, including the lowest one, reside in c-band, as it takes place in ZnO:Mn. It is concluded that the necessary condition to obtain Mn-related light emission in Mn-doped alloys is to make deeper the lowest excited level of MnZn2+ ions. One of the solutions is to produce Zn1-xMgxO:Mn solid solution with the bandgap energy larger than 4.0 eV using nonequilibrium fabrication approaches.
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