Abstract
Thin films of [Ta2O5]1-x-[TiO2]x, with x = 0.08, were deposited on quartz substrates (for optical study) and p- type mono- crystalline silicon (100) surfaces (for structural characterization and electrical measurements) by RF magnetron sputtering of [Ta2O5]0.92-[TiO2]0.08, ceramic target, using argon as sputtering gas and oxygen as reactive gas. Films were deposited at room temperature and further annealed at 400, 500, 600 and 700 0C, at ambient atmosphere. The observed XRD patterns show that the as- deposited and annealed films have crystalline structure. The spectral transmissions of the [Ta2O5]1-x-[TiO2]x (x = 0.08) films were measured in UV-visible range. The low optical transmittance in as-deposited films may be due to the presence of unreacted tantalum along with Ta2O5 in the films. From the observed transmission spectra, refractive index, optical band gap, absorption coefficient, extinction coefficient, and thickness of prepared [Ta2O5]0.92-[TiO2]0.08 films, have been calculated by Swanepoel’s envelope technique.
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